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ISP NAS of Ukraine


  1. T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, V. Lysenko Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs Semiconductor Physics, Quantum Electronics & Optoelectronics. - 2013. -vol.16, No.3. -pp. 299-314

  2. A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, A.S. Hirov, A.V. Rusavsky, V.P. Popov and V.S. Lysenko Graphene layers fabricated from the Ni/a-SiC bilayer precursor Semiconductor Physics, Quantum Electronics & Optoelectronics, - 2013. -vol.16, No.4. -pp. 335-341

  3. R. Yu, A.N. Nazarov, V.S. Lysenko, S. Das, I. Ferain, P. Razavi, M. Shayesteh, A. Kranti, R. Duffy, J.-P. Colinge Impact ionization induced dynamic floating body effect in junctionless transistors Solid-State Electronics. – 2013. - vol.90, No.12. - pp.28-33

  4. M.A. Negara, V. Djara, T.P. O’Regan, K. Cherkaoui, M. Burke, Y.Y. Gomeniuk, M. Schmidt, E. O’Connor, I.M. Povey, A.J. Quinn, P.K. Hurley Investigation of Electron Mobility in Surface-Channel Al2O3/In0.53Ga0.47As MOSFETs Solid-State Electronics. – 2013. -vol.88. -pp.37–42

  5. A.V. Vasin, Y.Y. Gomeniuk, A.V. Rusavsky, A.N. Nazarov, V.S. Lysenko, P.M. Lytvyn, O.G. Gontar, S.P. Starik, C. Nouveau and S. Ashok Nano- and micro-scale morphological defects in oxidized a-SiC:H thin films Phys. Status Solidi C. - 2013. -vol.10, No.4. -pp.619–623

  6. A.N. Nazarov, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, A.V. Vasin, A.V. Rusavsky, V.S. Lysenko and V.P. Popov Characterization of graphene layers by Kelvin probe force microscopy and micro-Raman spectroscopy Phys. Status Solidi C. - 2013. -vol.10, No.7–8. pp.1172–1175

  7. V.A. Ievtukh, A.N. Nazarov, V.I. Turchanikov and V.S. Lysenko Nanocluster NVM Cells Metrology: Window formation, Relaxation and Charge Retention Measurements Advanced Materials Research. - 2013. -vol.718-72. –pp.1118-1123

  8. V. Ievtukh, A. Nazarov, V. Turchanikov, V. Lysenko, A. Nassiopoulou Charge trapping processes at memory window formation in single- and double nanocrystal layered NVMs Microelectronic engineering – 2013. -vol.109. –pp.5-9

  9. N.M. Roshchina, P.S. Smertenko, V.G. Stepanov, L.V. Zavyalova, O.S. Lytvyn Some Properties of Thin Film Structures on the Base of ZnO Obtained by MOCVD Method Solid State Phenomena. – 2013. -vol.200. –pp.3-9

  10. I.P. Tyagulskii, S.I. Tyagulskii, A.N. Nazarov, V.S. Lysenko, K. Cherkaoui, P.K. Hurley Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperatures Microelectronic Engineering. - 2013. -vol.109. -pp.31–34

  11. T. Rudenko, A. Nazarov, R. Yu, S. Barraud, K. Cherkaoui, P. Razavi, G. Fagas Electron mobility in heavily doped junctionless nanowire SOI MOSFETs Microelectronic Engineering. - 2013. -vol.109. -pp.326–329

  12. T. Rudenko, R. Yu, S. Barraud, K. Cherkaoui and A. Nazarov Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects IEEE Electron Device Letters. - 2013. -vol.34, No.8. -pp.957-959

  13. Y.Y. Gomeniuk, Y.V. Gomeniuk, A.N. Nazarov, S. Monaghan, K. Cherkaoui, E. O’Connor, I. Povey, V. Djara and P.K. Hurley Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure ECS Transactions. - 2013. –vol.58 (7). -pp.379-384

  14. S.O. Gordienko, A.N. Nazarov, P.M. Lytvyn, A.A. Stadnik, Y.Y. Gomeniuk, A.V. Rusavsky, A.V. Vasin, V.G. Stepanov, V.S. Lysenko, T.M. Nazarova Carbon-rich nanostructured a-SiC for cold emitters Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference, -pp.76–79

  15. V.S. Lysenko, S.V. Kondratenko, Y.N. Kozyrev, V.P. Kladko, Y.V. Gomeniuk, Y.Y. Melnichuk, and N.B. Blanchard Surface reconstruction and optical absorption changes for Ge nanoclusters grown on chemically oxidized Si (100) surfaces Semicond. Sci. and Technology. – 2013. -vol.28. - p.085009-1 - 085009-9

  16. J. Lin, Y.Y. Gomeniuk, S. Monaghan, I.M. Povey, K. Cherkaoui, E. O’Connor, M. Power and P.K. Hurley An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors J. Appl. Phys. – 2013. -vol.114. -pp.144105