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Publications2011

  1. A. Nazarov; J.-P. Colinge, F. Balestra, J.-P. Raskin, F. Gamiz, V.S. Lysenko Semiconductor-On-Insulator Materials for Nanoelectronics Applications Heindelberg, Dorbrecht, London, New-York: Springer, 2011. - 456 p.

  2. A.V. Vasin, Sh. Muto, Yu. Ishikawa, A.V. Rusavsky, T. Kimura, V.S. Lysenko, A.N. Nazarov Comparative study of annealing and oxidation effects in SiC:H and a-SiC thin films deposited by radio-frequency magnetron sputtering techniques Thin Solid Films. – 2011. –vol.519. -No.7. –pp.2218–222

  3. A.V. Vasin, Sh. Muto, Yu. Ishikawa, J. Salonen, A.N. Nazarov, V.S. Lysenko, P. Okholin Attribution of white-light emitting centers with carbonized surfacecarbon in nano-structured SiO2:C layers Thin Solid Films. – 2011. –vol.519. -No.12. –pp.4008–4011

  4. S.O. Gordienko, A.N. Nazarov, A.V. Rusavsky, A.V. Vasin, Yu.V. Gomeniuk, V.S. Lysenko, V.V. Strelchuk, A.S. Nikolaenko, S. Ashok Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb Physica Status Solidi C. – 2011. –vol.8. -No.9. –pp.2749–2751

  5. A.N. Nazarov, I. Ferain, N. Dehdashti Akhavan, P. Razavi, R. Yu, J.-P. Colinge Random telegraph-signal noise in junctionless transistors Applied Physics Letters – 2011. –vol.98. –pp.092111-1-3

  6. A.N. Nazarov, I. Ferain, N. Dehdashti Akhavan, P. Razavi, R. Yu, J.-P. Colinge Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements Applied Physics Letters. – 2011. –vol.99. –pp.073502

  7. V.S. Lysenko, Y.V. Gomeniuk, V.V. Strelchuk, A.S. Nikolenko, S.V. Kondratenko, Yu.N. Kozyrev, M.Yu. Rubezhanska, C. Teichert Carrier transfer effect on transport in p-i-n structures with Ge quantum dots Phys. Rev. B. – 2011. -vol.84. -No.11. -pp.115425

  8. V.S. Lysenko, Yu.V. Gomeniuk, Yu.N. Kozyrev, M.Yu. Rubezhanska, V.K. Skylar, S.V. Kondratenko, Ye.Ye. Melnichuk, C. Teichert Effect of Ge nanoislands on lateral photoconductivity of Ge-SiOx-Si structures Advanced Materials Research. - 2011. –vol.276. -pp.179-186

  9. S.O. Gordienko, A.N. Nazarov, A.V. Rusavsky, A.V. Vasin, N. Rymarenko, V.G. Stepanov, T.M. Nazarova, V.S. Lysenko Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures Advanced Materials Research. - 2011. –vol.276. -pp.21-27

  10. Y.Y. Gomeniuk, Y.V. Gomeniuk, A.N. Nazarov, P.K. Hurley, K. Cherkaoui, S. Monaghan, P.E. Hellstrom, H.D.B. Gottlob, J. Schubert, J.M.J. Lopes Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs Advanced Materials Research. - 2011. –vol.276. -pp.87-96

  11. S.O. Gordienko, A.N. Nazarov, A.V. Rusavsky, A.V. Vasin, N. Rymarenko, V.G. Stepanov, T.M. Nazarova, V.S. Lysenko Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures Advanced Materials Research. – 2011. –vol.276. –pp.20-24

  12. Y.Y. Gomeniuk, Y.V. Gomeniuk, A.N. Nazarov, V.S. Lysenko, H.J. Osten, A. Laha Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon Advanced Materials Research. - 2011. –vol.276. -pp.167-178

  13. Y.Y. Gomeniuk, Y.V. Gomeniuk, I.P. Tyagulskii, S.I. Tyagulskii, A.N. Nazarov, V.S. Lysenko, K. Cherkaoui, S. Monaghan, P.K. Hurley Transport and interface states in high-k LaSiOx dielectric Microelectronic Engineering. – 2011. –vol.88. –pp.1342–1345

  14. P.F. Zhang, R.E. Nagle, N. Deepak, I.M. Povey, Y.Y. Gomeniuk, E. O’Connor, N. Petkov, M. Schmidt, T.P. O’Regan, K. Cherkaoui, M.E. Pemble, P.K. Hurley, R.W. Whatmore The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system Microelectronic Engineering. – 2011. –vol.88. –pp.1054-1057

  15. T. Rudenko, V. Kilchytska, M.K. Arshad, J.–P. Raskin, A. Nazarov, D. Flandre On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part I - Effect of gate-voltage-dependent mobility IEEE Transactions on Electron Devices. – 2011. –vol.58. –No.12. –pp.4172-4179

  16. T. Rudenko, V. Kilchytska, M.K. Arshad, J.–P. Raskin, A. Nazarov, D. Flandre On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part II - Effect of drain voltage IEEE Transactions on Electron Devices. – 2011. –vol.58. – No.12. –pp.4180-4188

  17. A.N. Nazarov, C.W. Lee, A. Kranti, I. Ferain, R. Yan, Akhavan N. Dehdashti, P. Razavi, R. Yu, J.-P. Colinge Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs ECS Transactions. – 2011. –vol.35. –No.5. –pp.73-78