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ISP NAS of Ukraine


  1. A. Nazarov, V. Turchanikov Complex Nature of Charge Trapping and Retention in NC NVM Structures Nanocrystals - ed. Yoshitake Masuda - Scyo – 2010 – 326 P.

  2. E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, B. D. Shanina, A. V. Vasin, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, J. Hoentsch, Y. Koshka The EPR study of the carbon and silicon related defects in carbon-rich hydrogenated amorphous silicon-carbon films Phys. Rev. B – 2010 –vol.81 –No.15. –pp.155319-1-9

  3. T. Rudenko, V. Kilchytska, S. Burignat et al. Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides Solid State Electronics. – 2010. –vol.54. –No.2. –pp.164-170

  4. T. Rudenko, V. Kilchytska, J.-P. Raskin et al. Special features of the back-gate effects in UTB SOI MOSFETs Abstracts of the 1-st Ukrainian-French Seminar "Semiconductor-on-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnistics" & 6-th International SemOI Workshop “Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices”, 2010, Kyiv, Ukraine. – 2010. –pp.18-19.

  5. D. Flandre, V. Kilchytska and T. Rudenko gm/Id method for threshold voltage extraction applicable in advanced MOSFETs with non-linear behavior above threshold Electron Device Letters. – 2010. –vol.31. –No.9. –pp.930-932

  6. J.-P. Colinge, C.-W. Lee, I. Ferain, N. Dehdashti Akhavan, R. Yan, P. Razavi, R. Yu, A. N. Nazarov, R. T. Doria Reduced electric field in junctionless transistors Applied Physics Letters. – 2010. -vol.96. -No.7. -pp.073510-1 -3

  7. C.-W. Lee, A. N. Nazarov, I. Ferain, N. Dehdashti Akhavan, R. Yan, P. Razavi, R. Yu, R. T. Doria, J.-P. Colinge Low subthreshold slope in junctionless multigate transistors Applied Physics Letters. – 2010. -vol.96. -No.10. -pp.102106-1 -3

  8. Y.Y. Gomeniuk, Y.V. Gomeniuk, A.N. Nazarov, P.K. Hurley, K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, M. Schmidt, J. Schubert, J.M.J. Lopes, O. Engstrom Electrical Properties of LaLuO3/Si(100) Structures Prepared by Molecular Beam Deposition ECS Transactions. – 2010. –vol.33. –No.3. –pp.221-229

  9. A.N. Nazarov, S.I. Tiagulskyi, I.P. Tyagulskyy, V.S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, W. Skorupa The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices Journal of Applied Physics. - 2010. -vol.107. -No.12 -p.123112 1-14