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  1. T. Rudenko, V. Kilchytska, V. Dessard and D. Flandre A Revised Reverse Gated-Diode Technique for Determining Generation Parameters in Thin-Film Silicon-On-Insulator Devices and its Application at High Temperatures J. Appl. Phys, vol.97, May, pp.093718-1-9 (2005)

  2. V.I. Turchanikov, A.N. Nazarov, V.S. Lysenko, J. Carreras, B. Garrido Charge storage peculiarities in poly-Si–SiO2–Si memory devices with Si nanocrystals rich SiO2 Microelectronics Reliability, vol.45, pp.903–906 (2005)

  3. V.I. Turchanikov, A.N. Nazarov, V.S. Lysenko, J. Carreras and B. Garrido Charge trapping in Si-implanted SiO2-Si memory devices at high electric fields and elevated temperatures Journal of Physics: Conference Series, vol.10, pp.409–412 (2005)

  4. A. Nazarov, W. Skorupa, I.N. Osiyuk, I.P. Tyagulskii, V.S. Lysenko, R.A. Yankov Comparative Study of Charge Trapping in High-Dose Si and Ge-Implanted Al-SiO2-Si Structures Journal of The Electrochemical Society, vol.152. -No.2. -pp.F20-F25 (2005)

  5. Pradhan S.K., Nouveau C., Vasin A., Djouadi M.-A. Deposition of CrN coatings by PVD methods for wear resistance application Surface and Coating Technology vol.200 –No.1-4 –pp.141-145 (2005)

  6. T. Rudenko, N. Collaert, S. De Gendt, V. Kilchytska, M. Jurczak, and D. Flandre Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode Microelectronic Engineering, vol.80, pp.386-389 (2005)

  7. H.Ch. Alt, Y.V. Gomeniuk, F. Bittersberger, A. Kempf and D. Zemke Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration Appl. Phys. Lett., vol.87, 151909-1–151909-3 (2005)

  8. D. Lederer, V.Kilchytska, T. Rudenko, N.Collaert, D. Flandre, A. Dixit, K. De Meyer, J.-P. Raskin FinFET analogue characterization from DC to 110 GHz Solid-State Electronics, vol.49, No.9, pp.1488-1496 (2005)

  9. T.E. Rudenko, I.N. Osiyuk, I.P. Tyagulski, H.O. Olafsson, E.O. Sveinbjörnsson Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC Solid-State Electronics, vol.49, No.4, pp.545-553 (2005)

  10. A. Nazarov, J.M. Sun, I.N. Osiyuk, I.P. Tyagulski, V.S. Lysenko, W. Skorupa, R.A. Yankov and T. Gebel Light emission and charge trapping in erbium doped silicon dioxide films containing silicon nanocrystals Applied Physical Letters, vol.86, pp.151914-1-151914-3 (2005)

  11. J. Sun, W. Skorupa, T. Dekorsy, M. Helm and A. Nazarov On the mechanism of electroluminescence excitation in Er-doped SiO2, containing silicon nanoclusters Optical Materials, vol.27, pp.1050-1054 (2005)

  12. W. Skorupa, J.M. Sun, S. Pruchnal, L. Rebohle, T. Gebel, A.N. Nazarov, I.N. Osiyuk and M. Helm Rare earth implantation for silicon based light emission Solid State Phenomena, vol.108-109, pp.755-760 (2005)

  13. V.I. Turchanikov, A.N. Nazarov, V.S. Lysenko, O. Winkler, B. Spangenberg, H. Kurz Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots Materials Science and Engineering B vol.124-125, pp.517–520 (2005)

  14. A.N. Nazarov, J.N. Vovk, I.N. Osiyuk, A.S. Tkachenko, I.P. Tyagulski, V.S. Lysenko, T. Gebel, L. Rebohle, W. Skorupa, R.A. Yankov The Effect of Radio-Frequency Plasma Treatment on the Electroluminescent Properties of Violet Light-Emitting Germanium Implanted Metal-Oxide–Semiconductor Structures Materials Science and Engineering B vol.124-125, pp.458–461 (2005)