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ISP NAS of Ukraine


  1. V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa CdSSe quantum dots: effect of the hydrogen RF plasma treatment on exciton luminescence Physica E, vol.22, pp.804-807 (2004)

  2. A.N. Nazarov, Ya.N. Vovk, V.S. Lysenko, O. Kon’kov, E. Terukov Charge transport, trapping and electroluminescence in erbium diped a-Si:H/n-Si light-emitting heterodiodes Material Science and Engineering B105, pp.61-64 (2003)

  3. T. Gebel, L. Rebohle, J. Sun, W. Skorupa, A.N. Nazarov, and I.N. Osiyuk Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters Physica E, vol.16, pp.499-504 (2003)

  4. M.-A. Djouadi, A.V. Vasin, C. Nouveau, B. Angleraud, P.-Y. Tessier Deposition of boron nitride films by PVD methods: transition from h-BN to c-BN Surface and Coatings Technology No.180-181, pp.174-177 (2004)

  5. T. Rudenko, A. Rudenko, V. Kilchytska, S. Cristoloveanu, T. Ernst , J.-P. Colinge, V. Dessard, D. Flandre Determination of film and surface recombination in thin-film SOI devices using gated-diode technique Solid State Electronics, vol.48, No.3, pp.389-399 (2004)

  6. H.Ch. Alt and Y.V. Gomeniuk Local mode frequencies of the NAs-InGa nearest-neighbor pair in (Ga,In)(As,N) alloys Phys. Rev. B, 2004, vol.70, No.16, pp.161314-1–161314-4

  7. T. Gebel, L. Rebohle, R.A. Yankov, A.N. Nazarov, W. Skorupa Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping Microwave and Optical technology, edt. by J. Pistora, Proc. of SPIE, vol.5445, pp.284-289 (2004)

  8. H.Ch. Alt, Y.V. Gomeniuk, and B. Wiedemann Spectroscopic evidence for a N-Ga vacancy defect in GaAs Phys. Rev. B, vol.69, No.12, pp.125214-1–125214-6 (2004)