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ISP NAS of Ukraine


  1. V. Mortet, A. Vasin, P.-Y. Jouan, O. Elmazria, M.-A. Djouadi Aluminium nitride films deposited by reactive triode sputtering for surface acoustic wave device application Surface and Coating Technology vol.176, No.1, pp.88-92 (2003)

  2. Y.V. Gomeniuk, H.Ch. Alt, U. Kretzer Far-infrared absorption due to shallow acceptors in semi-insulating GaAs in dependence on EL2 bleaching Phys. Stat. Sol. (b), vol.240, No.1, pp.139-147 (2003)

  3. H.Ch. Alt, Y.V. Gomeniuk, U. Kretzer Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2 Phys. Stat. Sol. (b), vol.235, No.1, pp.58-62 (2003)

  4. H.Ch. Alt, Y.V. Gomeniuk, G. Lenk and B. Wiedemann GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy Physica B: Condensed Matter, vol.340-342, pp.394-398 (2003)

  5. A.N. Nazarov, V. Kilchytska, Yu. Houk, and D. Ballutaud Mechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection J. Appl. Phys., vol.94, pp.1823-1832 (2003)

  6. H.Ch. Alt, Y.V. Gomeniuk, B. Wiedemann, H. Riemann Method to determine carbon in silicon by infrared absorption spectroscopy. Journal of the Electrochemical Society vol.150, No.8, pp.G498-G501 (2003)

  7. H.Ch. Alt, Y.V. Gomeniuk, G. Ebbinhaus, A. Ramakrishnan, H. Riechert Quantitative spectroscopy of substitutional nitrogen in GaAs1-xNx epitaxial layers by local vibrational mode absorption Semicond. Sci. and Technology, vol.18, pp.303-306 (2003)

  8. A.N. Nazarov, T. Gebel, L. Rebohle, W. Skorupa, I.N. Osiyuk, and V.S. Lysenko Trapping of negative and positive charges in Ge+ ion implanted dioxide layers subjected to high-field electron injection J. Appl. Phys., vol.94, pp.4440-4448 (2003)