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  1. T. Rudenko, E. Sveinbjörnsson, and M. Sadeghi A simple method for the evaluation of the recombination parameters in SiC MOS structures Microelectronic Engineering, vol.48, pp.273-276 (1999)

  2. A.N. Nazarov, I.P. Barchuk, V.S. Lysenko and J.P. Colinge Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias-temperature instability of buried oxide Microelectronic Engineering, vol.48, pp.379-382 (1999)

  3. V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk and A.K. Mikhnov Electrical characterization of the amorphous SiC-pSi structure Microelectronic Engineering, vol.48, pp.265-268 (1999)

  4. T. Rudenko Evaluation of generation and recombination parameters of SOI MOS structures from gated-diode measurements Electron Technology, v.32, No.1/2, pp.110-115 (1999)

  5. D. Ballutaud, A. Boutry-Forveille and A. Nazarov Hydrogen thermal stability in buried oxides of SOI structures Microelectronic Engineering, vol.48, pp.359-362 (1999)

  6. E.I. Terukov, B.J. Ber, V.Kh. Kudoyarova, V.Yu. Davydov, A.N. Nazarov, Ja.N. Vovk, and S. Ashok Hydrogen-enhanced transformation of electrical and structural properties of thin subsurface ion implanted silicon layer in SiO2-Si systems Solid State Phenomena, vol.69-70, pp.595-600 (1999)

  7. Y.V. Gomeniuk, V.S. Lysenko, I.N. Osiyuk, I.P. Tyagulski, M.Ya. Valakh, V.A. Yukhimchuk, M. Willander, C.J. Patel Properties of SiGe/Si heterostructures fabricated by ion implantation technique Semicond. Phys., Quantum Electronics and Optoelectronics, vol.2, No.3, pp.74-80 (1999)

  8. T. Ernst, S. Cristoloveanu, A. Vandooren, T. Rudenko, and J.-P.Colinge Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices IEEE Trans. Electron. Dev., vol.46. No.7, pp.1503-1509 (1999)